All MOSFET. 2SJ448 Datasheet

 

2SJ448 Datasheet and Replacement


   Type Designator: 2SJ448
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
 

 2SJ448 substitution

   - MOSFET ⓘ Cross-Reference Search

 

2SJ448 Datasheet (PDF)

 ..1. Size:120K  nec
2sj448.pdf pdf_icon

2SJ448

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ448SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SJ448 is P-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on) = 2.0 MAX. (@ VGS = 10 V, ID = 2.0 A) L

 9.1. Size:2166K  1
2sj44.pdf pdf_icon

2SJ448

 9.2. Size:110K  toshiba
2sj440.pdf pdf_icon

2SJ448

 9.3. Size:116K  nec
2sj449-1.pdf pdf_icon

2SJ448

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L

Datasheet: 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , NCEP15T14 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 .

Keywords - 2SJ448 MOSFET datasheet

 2SJ448 cross reference
 2SJ448 equivalent finder
 2SJ448 lookup
 2SJ448 substitution
 2SJ448 replacement

 

 
Back to Top

 


 
.