2SJ448
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ448
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO220F
2SJ448
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ448
Datasheet (PDF)
..1. Size:120K nec
2sj448.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ448SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SJ448 is P-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on) = 2.0 MAX. (@ VGS = 10 V, ID = 2.0 A) L
9.3. Size:116K nec
2sj449-1.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L
9.4. Size:120K nec
2sj449.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L
9.5. Size:88K interfet
2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf
Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (
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