IRLW640A Datasheet and Replacement
Type Designator: IRLW640A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
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IRLW640A Datasheet (PDF)
irlw640a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut
irlw610a irli610a.pdf

IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain
Datasheet: IRLU3410 , IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRF1404 , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 .
History: SHD226412R | 7NM70G-TF3T-T | HM730F | IXTB30N100L | WSD3042DN56 | BUZ110S | HY1203S
Keywords - IRLW640A MOSFET datasheet
IRLW640A cross reference
IRLW640A equivalent finder
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IRLW640A substitution
IRLW640A replacement
History: SHD226412R | 7NM70G-TF3T-T | HM730F | IXTB30N100L | WSD3042DN56 | BUZ110S | HY1203S



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