All MOSFET. IRLW640A Datasheet

 

IRLW640A Datasheet and Replacement


   Type Designator: IRLW640A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO263
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IRLW640A Datasheet (PDF)

 ..1. Size:201K  1
irli640a irlw640a.pdf pdf_icon

IRLW640A

 ..2. Size:983K  samsung
irlw640a.pdf pdf_icon

IRLW640A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.1. Size:204K  1
irli620a irlw620a.pdf pdf_icon

IRLW640A

 9.2. Size:234K  fairchild semi
irlw610a irli610a.pdf pdf_icon

IRLW640A

IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain

Datasheet: IRLU3410 , IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRF1404 , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 .

History: SHD226412R | 7NM70G-TF3T-T | HM730F | IXTB30N100L | WSD3042DN56 | BUZ110S | HY1203S

Keywords - IRLW640A MOSFET datasheet

 IRLW640A cross reference
 IRLW640A equivalent finder
 IRLW640A lookup
 IRLW640A substitution
 IRLW640A replacement

 

 
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