AM1340N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM1340N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
trⓘ - Rise Time: 24 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: SC-70
AM1340N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM1340N Datasheet (PDF)
am1340n.pdf
Analog Power AM1340NN-Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.086 @ VGS = 10 V 1.7battery-powered products such
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