All MOSFET. AM1400NE Datasheet

 

AM1400NE MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM1400NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: SC-70

 AM1400NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM1400NE Datasheet (PDF)

 ..1. Size:284K  analog power
 am1400ne.pdf

AM1400NE AM1400NE

Analog Power AM1400NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1100 @ VGS = 10V1 Low thermal impedance 1501200 @ VGS = 4.5V0.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

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