AM1400NE Datasheet and Replacement
Type Designator: AM1400NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: SC-70
AM1400NE substitution
AM1400NE Datasheet (PDF)
am1400ne.pdf

Analog Power AM1400NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1100 @ VGS = 10V1 Low thermal impedance 1501200 @ VGS = 4.5V0.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
Datasheet: AM1320N , AM1321P , AM1323P , AM1330N , AM1331P , AM1340N , AM1360NE , AM1370N , IRF3710 , AM1420N , AM1421P , AM1430N , AM1431P , AM1432NE , AM1433PE , AM1434N , AM1440N .
History: H90N71P | SSF11NS70UF | IPI60R299CP | HY3007B | STP4931 | SWI6N65K | IRLL024Z
Keywords - AM1400NE MOSFET datasheet
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History: H90N71P | SSF11NS70UF | IPI60R299CP | HY3007B | STP4931 | SWI6N65K | IRLL024Z



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