All MOSFET. IRLWZ14A Datasheet

 

IRLWZ14A Datasheet and Replacement


   Type Designator: IRLWZ14A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 7.2 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TO263
 

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IRLWZ14A Datasheet (PDF)

 ..1. Size:214K  samsung
 irlwz14a.pdf pdf_icon

IRLWZ14A

IRLW/IZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)112331. Gate 2. Dra

 9.1. Size:222K  samsung
 irlwz44a.pdf pdf_icon

IRLWZ14A

IRLW/IZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.025 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)112331. Gate 2. Drain

 9.2. Size:217K  samsung
 irlwz24a.pdf pdf_icon

IRLWZ14A

IRLW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)112331. Gate 2. Dra

 9.3. Size:220K  samsung
 irlwz34a.pdf pdf_icon

IRLWZ14A

IRLW/IZ34AAdvanced Power MOSFETFEATURESBVDSS = 16 V Avalanche Rugged TechnologyRDS(on) = 0.046 Rugged Gate Oxide Technology Lower Input CapacitanceID = 30 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)112331. Gate 2. Drain

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Datasheet: IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRLW640A , IRFB4110 , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 .

History: IRLW630A

Keywords - IRLWZ14A MOSFET datasheet

 IRLWZ14A cross reference
 IRLWZ14A equivalent finder
 IRLWZ14A lookup
 IRLWZ14A substitution
 IRLWZ14A replacement

 

 
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