IRLWZ14A MOSFET: N-Ch, 60V, 10A. Full specification with pinout and replacement list

IRLWZ14A Specs

..1. Size:214K samsung
irlwz14a.pdf pdf_icon

IRLW/IZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 1 2 3 3 1. Gate 2. Dra... See More ⇒

9.1. Size:222K samsung
irlwz44a.pdf pdf_icon

IRLW/IZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.025 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 1 2 3 3 1. Gate 2. Drain ... See More ⇒

9.2. Size:217K samsung
irlwz24a.pdf pdf_icon

IRLW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 1 2 3 3 1. Gate 2. Dra... See More ⇒

9.3. Size:220K samsung
irlwz34a.pdf pdf_icon

IRLW/IZ34A Advanced Power MOSFET FEATURES BVDSS = 16 V Avalanche Rugged Technology RDS(on) = 0.046 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 1 2 3 3 1. Gate 2. Drain... See More ⇒

Detailed specifications: IRLW510A , IRLW520A , IRLW530A , IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRLW640A , IRLZ44N , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 .