AM1936NE MOSFET. Datasheet pdf. Equivalent
Type Designator: AM1936NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SC-70
AM1936NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM1936NE Datasheet (PDF)
am1936ne.pdf
Analog Power AM1936NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)90 @ VGS = 10V1.5 Low thermal impedance 30130 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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