AM20N10-180D Specs and Replacement

Type Designator: AM20N10-180D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

AM20N10-180D substitution

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AM20N10-180D datasheet

 ..1. Size:291K  analog power
 am20n10-180d.pdf pdf_icon

AM20N10-180D

Analog Power AM20N10-180D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 180 @ VGS = 10V 14 Low thermal impedance 100 190 @ VGS = 4.5V 13 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2... See More ⇒

 5.1. Size:287K  analog power
 am20n10-115d.pdf pdf_icon

AM20N10-180D

Analog Power AM20N10-115D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 115 @ VGS = 10V 17 Low thermal impedance 100 135 @ VGS = 4.5V 16 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2... See More ⇒

 5.2. Size:73K  analog power
 am20n10-130d.pdf pdf_icon

AM20N10-180D

Analog Power AM20N10-130D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17 converters and power management in portable and 100 160 @ VGS = 4.5V 15 ... See More ⇒

 5.3. Size:850K  cn vbsemi
 am20n10-130d.pdf pdf_icon

AM20N10-180D

AM20N10-130D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI... See More ⇒

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Detailed specifications: AM1925PE, AM1936NE, AM1960NE, AM1963PE, AM20N06-90D, AM20N06-90I, AM20N10-115D, AM20N10-130D, SKD502T, AM20N10-250D, AM20N10-250DE, AM20N10-350D, AM20N15-250B, AM20N15-250D, AM20N20-125D, AM20P02-60D, AM20P02-99D

Keywords - AM20N10-180D MOSFET specs

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