AM20N10-180D Datasheet and Replacement. Cross Reference Search

AM20N10-180D Datasheet (PDF)

..1. Size:291K analog power
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Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

5.1. Size:287K analog power
am20n10-115d.pdf pdf_icon

Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

5.2. Size:73K analog power
am20n10-130d.pdf pdf_icon

Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15

5.3. Size:850K cn vbsemi
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AM20N10-130Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

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