AM20N10-350D Specs and Replacement

Type Designator: AM20N10-350D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO-252

AM20N10-350D substitution

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AM20N10-350D datasheet

 ..1. Size:305K  analog power
am20n10-350d.pdf pdf_icon

AM20N10-350D

Analog Power AM20N10-350D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 420 @ VGS = 10V 9.0 Low thermal impedance 100 460 @ VGS = 5.5V 8.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE ... See More ⇒

 6.1. Size:86K  analog power
am20n10-250de.pdf pdf_icon

AM20N10-350D

Analog Power AM20N10-250DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11 S converters and power management in portable and 100 355 @ VG = 4.5V ... See More ⇒

 6.2. Size:287K  analog power
am20n10-115d.pdf pdf_icon

AM20N10-350D

Analog Power AM20N10-115D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 115 @ VGS = 10V 17 Low thermal impedance 100 135 @ VGS = 4.5V 16 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2... See More ⇒

 6.3. Size:289K  analog power
am20n10-250d.pdf pdf_icon

AM20N10-350D

Analog Power AM20N10-250D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 280 @ VGS = 10V 11 Low thermal impedance 100 355 @ VGS = 4.5V 10 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost... See More ⇒

Detailed specifications: AM1963PE, AM20N06-90D, AM20N06-90I, AM20N10-115D, AM20N10-130D, AM20N10-180D, AM20N10-250D, AM20N10-250DE, AON7410, AM20N15-250B, AM20N15-250D, AM20N20-125D, AM20P02-60D, AM20P02-99D, AM20P03-60D, AM20P03-60I, AM20P04-60D

Keywords - AM20N10-350D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.