AM20N10-350D - описание и поиск аналогов

 ..1. Size:305K  analog power
 am20n10-350d.pdf 

Analog Power AM20N10-350D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 420 @ VGS = 10V 9.0 Low thermal impedance 100 460 @ VGS = 5.5V 8.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 6.1. Size:86K  analog power
 am20n10-250de.pdf 

Analog Power AM20N10-250DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11 S converters and power management in portable and 100 355 @ VG = 4.5V

 6.2. Size:287K  analog power
 am20n10-115d.pdf 

Analog Power AM20N10-115D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 115 @ VGS = 10V 17 Low thermal impedance 100 135 @ VGS = 4.5V 16 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 6.3. Size:289K  analog power
 am20n10-250d.pdf 

Analog Power AM20N10-250D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 280 @ VGS = 10V 11 Low thermal impedance 100 355 @ VGS = 4.5V 10 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 6.4. Size:73K  analog power
 am20n10-130d.pdf 

Analog Power AM20N10-130D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17 converters and power management in portable and 100 160 @ VGS = 4.5V 15

 6.5. Size:291K  analog power
 am20n10-180d.pdf 

Analog Power AM20N10-180D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 180 @ VGS = 10V 14 Low thermal impedance 100 190 @ VGS = 4.5V 13 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 6.6. Size:859K  cn vbsemi
 am20n10-250d.pdf 

AM20N10-250D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 6.7. Size:850K  cn vbsemi
 am20n10-130d.pdf 

AM20N10-130D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI