All MOSFET. IRLWZ44A Datasheet

 

IRLWZ44A Datasheet and Replacement


   Type Designator: IRLWZ44A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263
 

 IRLWZ44A substitution

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IRLWZ44A Datasheet (PDF)

 ..1. Size:222K  samsung
 irlwz44a.pdf pdf_icon

IRLWZ44A

IRLW/IZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.025 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)112331. Gate 2. Drain

 9.1. Size:217K  samsung
 irlwz24a.pdf pdf_icon

IRLWZ44A

IRLW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)112331. Gate 2. Dra

 9.2. Size:214K  samsung
 irlwz14a.pdf pdf_icon

IRLWZ44A

IRLW/IZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)112331. Gate 2. Dra

 9.3. Size:220K  samsung
 irlwz34a.pdf pdf_icon

IRLWZ44A

IRLW/IZ34AAdvanced Power MOSFETFEATURESBVDSS = 16 V Avalanche Rugged TechnologyRDS(on) = 0.046 Rugged Gate Oxide Technology Lower Input CapacitanceID = 30 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)112331. Gate 2. Drain

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Datasheet: IRLW540A , IRLW610A , IRLW620A , IRLW630A , IRLW640A , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRF3710 , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRLZ24NL .

Keywords - IRLWZ44A MOSFET datasheet

 IRLWZ44A cross reference
 IRLWZ44A equivalent finder
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