All MOSFET. AM20P06-135D Datasheet

 

AM20P06-135D MOSFET. Datasheet pdf. Equivalent

Type Designator: AM20P06-135D

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: TO-252

AM20P06-135D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM20P06-135D Datasheet (PDF)

1.1. am20p06-135d.pdf Size:153K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P06-135D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω)ID (A) dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16 converters and power management in portable and -60 battery-powered produc

1.2. am20p06-175i.pdf Size:293K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P06-175I P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 175 @ VGS = -10V -14 • Low thermal impedance -60 200 @ VGS = -4.5V -13 • Fast switching speed Typical Applications: TO-251 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

 4.1. am20p03-60d.pdf Size:140K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P03-60D P-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω)ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24 -32 battery-powered products s

4.2. am20p02-60d.pdf Size:139K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P02-60D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω)ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -20 converters, power management in

 4.3. am20p04-60d.pdf Size:207K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P04-60D P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω)ID (A) dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22 converters and power management in portable and -40 battery-powered products

4.4. am20p02-99d.pdf Size:139K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P02-99D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (mΩ)ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17 -20 converters, power management i

 4.5. am20p03-60i.pdf Size:141K _upd-mosfet

AM20P06-135D
AM20P06-135D

Analog Power AM20P03-60I P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω)ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24 -30 converters, power management in

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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