AM2332N Datasheet PDF and Equivalents Search

 ..1. Size:172K  analog power
 am2332n.pdf

Analog Power AM2332N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7 battery-powered products suc... See More ⇒

 9.1. Size:294K  analog power
 am2339p.pdf

Analog Power AM2339P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM... See More ⇒

 9.2. Size:295K  analog power
 am2334ne.pdf

Analog Power AM2334NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

 9.3. Size:168K  analog power
 am2334n.pdf

Analog Power AM2334N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s... See More ⇒

 9.4. Size:202K  analog power
 am2330ne.pdf

Analog Power AM2330NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2 converters and power management in portable and 30 battery-powered products suc... See More ⇒

 9.5. Size:291K  analog power
 am2336n.pdf

Analog Power AM2336N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 4.5V 5.3 Low thermal impedance 30 64 @ VGS = 2.5V 3.7 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM ... See More ⇒

 9.6. Size:289K  analog power
 am2337p.pdf

Analog Power AM2337P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 112 @ VGS = -4.5V -2.8 Low thermal impedance -30 172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX... See More ⇒

 9.7. Size:93K  analog power
 am2330n.pdf

Analog Power AM2330N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2 converters and power management in portable and 30 battery-powered products suc... See More ⇒

 9.8. Size:1452K  cn vbsemi
 am2336n-t1.pdf

AM2336N-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒

 9.9. Size:1480K  cn vbsemi
 am2339p-t1.pdf

AM2339P-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒