AM2345PE Specs and Replacement

Type Designator: AM2345PE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.164 Ohm

Package: SOT-23

AM2345PE substitution

- MOSFET ⓘ Cross-Reference Search

 

AM2345PE datasheet

 ..1. Size:176K  analog power
am2345pe.pdf pdf_icon

AM2345PE

Analog Power AM2345PE P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ( )ID (A) applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2 power management in portable and -40 battery-powered pr... See More ⇒

 7.1. Size:27K  analog power
am2345p.pdf pdf_icon

AM2345PE

Analog Power AM2345P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A) applications are DC-DC converters and 0.164 @ V = -10 V -3.2 GS power management in portable and -40 battery-powered pr... See More ⇒

 9.1. Size:134K  analog power
am2341p.pdf pdf_icon

AM2345PE

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power ... See More ⇒

 9.2. Size:286K  analog power
am2344n.pdf pdf_icon

AM2345PE

Analog Power AM2344N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = 10V 5.8 Low thermal impedance 40 35 @ VGS = 4.5V 5.0 Fast switching speed SOT-23 Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: AM2341P, AM2342, AM2342N, AM2342NE, AM2343P, AM2343PE, AM2344N, AM2345P, 10N60, AM2347P, AM2358N, AM2358NE, AM2359P, AM2359PE, AM2360N, AM2361P, AM2362N

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.