AM2345PE. Аналоги и основные параметры

Наименование производителя: AM2345PE

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.8 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.164 Ohm

Тип корпуса: SOT-23

Аналог (замена) для AM2345PE

- подборⓘ MOSFET транзистора по параметрам

 

AM2345PE даташит

 ..1. Size:176K  analog power
am2345pe.pdfpdf_icon

AM2345PE

Analog Power AM2345PE P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ( )ID (A) applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2 power management in portable and -40 battery-powered pr

 7.1. Size:27K  analog power
am2345p.pdfpdf_icon

AM2345PE

Analog Power AM2345P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A) applications are DC-DC converters and 0.164 @ V = -10 V -3.2 GS power management in portable and -40 battery-powered pr

 9.1. Size:134K  analog power
am2341p.pdfpdf_icon

AM2345PE

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power

 9.2. Size:286K  analog power
am2344n.pdfpdf_icon

AM2345PE

Analog Power AM2344N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = 10V 5.8 Low thermal impedance 40 35 @ VGS = 4.5V 5.0 Fast switching speed SOT-23 Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI

Другие IGBT... AM2341P, AM2342, AM2342N, AM2342NE, AM2343P, AM2343PE, AM2344N, AM2345P, 10N60, AM2347P, AM2358N, AM2358NE, AM2359P, AM2359PE, AM2360N, AM2361P, AM2362N