All MOSFET. AM2391P Datasheet

 

AM2391P MOSFET. Datasheet pdf. Equivalent

Type Designator: AM2391P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 0.9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.4 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 41 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: SOT-23

AM2391P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AM2391P Datasheet (PDF)

1.1. am2391p.pdf Size:287K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2391P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (Ω) VDS (V) ID(A) • Low r trench technology DS(on) 1.2 @ VGS = -10V -0.9 • Low thermal impedance -150 1.3 @ VGS = -4.5V -0.8 • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost c

5.1. am2398n.pdf Size:133K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2398N N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) (Ω)ID (A) energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2 power management circuitry. Typical 60 applications are power switch, power 0.273 @ VGS = 4.5V 1

5.2. am2398ne.pdf Size:175K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2398NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (Ω)ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2 battery-powered products suc

 5.3. am2392n.pdf Size:278K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (Ω) VDS (V) ID(A) • Low r trench technology DS(on) 1.2 @ VGS = 10V 0.9 • Low thermal impedance 150 1.4 @ VGS = 5.5V 0.8 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

5.4. am2394ne.pdf Size:289K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2394NE N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 1200 @ VGS = 10V 0.9 • Low thermal impedance 150 1300 @ VGS = 4.5V 0.8 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MA

 5.5. am2390n.pdf Size:276K _upd-mosfet

AM2391P
AM2391P

Analog Power AM2390N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (Ω) VDS (V) ID(A) • Low r trench technology DS(on) 0.7 @ VGS = 10V 1.1 • Low thermal impedance 150 1.2 @ VGS = 4.5V 0.8 • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost conv

Datasheet: PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , IRF630 , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T .

 
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