IRFBC40LPBF Specs and Replacement
Type Designator: IRFBC40LPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-262
IRFBC40LPBF substitution
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IRFBC40LPBF datasheet
irfbc40spbf irfbc40lpbf.pdf
PD - 95546 IRFBC40S/LPbF Lead-Free 7/22/04 Document Number 91116 www.vishay.com 1 IRFBC40S/LPbF Document Number 91116 www.vishay.com 2 IRFBC40S/LPbF Document Number 91116 www.vishay.com 3 IRFBC40S/LPbF Document Number 91116 www.vishay.com 4 IRFBC40S/LPbF Document Number 91116 www.vishay.com 5 IRFBC40S/LPbF Document Number 91116 www.vishay.com 6 IRFBC40S/LPbF... See More ⇒
irfbc40lpbf.pdf
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S) VDS (V) 600 Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) RDS(on) ( )VGS = 10 V 1.2 RoHS* Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 SiHFBC20S) Qgs (nC) 8.3 Dynamic dV/dt Rating Qgd (nC) 30 15... See More ⇒
irfbc40s irfbc40l.pdf
PD - 91016A IRFBC40S/L HEXFET Power MOSFET Surface Mount (IRFBC40S) D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating RDS(on) = 1.2 150 C Operating Temperature G Fast Switching ID = 6.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer with the bes... See More ⇒
Detailed specifications: AM2392N, AM2394NE, AM2398N, AM2398NE, IRFBC40APBF, IRFBC40ASPBF, IRFBC40LC, IRFBC40LCPBF, AON7410, IRFBC40PBF, IRFBC40SPBF, IRFBE20PBF, IRFBE30L, IRFBE30LPBF, IRFBE30PBF, IRFBE30S, IRFBE30SPBF
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