All MOSFET. IRFD010 Datasheet

 

IRFD010 Datasheet and Replacement


   Type Designator: IRFD010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DIP-4
 

 IRFD010 substitution

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IRFD010 Datasheet (PDF)

 ..1. Size:439K  international rectifier
 irfd010 irfd012.pdf pdf_icon

IRFD010

 8.1. Size:1360K  international rectifier
 irfd014pbf.pdf pdf_icon

IRFD010

PD- 95920IRFD014PbF Lead-Free10/27/04Document Number: 91125 www.vishay.com1IRFD014PbFDocument Number: 91125 www.vishay.com2IRFD014PbFDocument Number: 91125 www.vishay.com3IRFD014PbFDocument Number: 91125 www.vishay.com4IRFD014PbFDocument Number: 91125 www.vishay.com5IRFD014PbFDocument Number: 91125 www.vishay.com6IRFD014PbFPeak Diode Recovery

 8.2. Size:171K  international rectifier
 irfd014.pdf pdf_icon

IRFD010

 8.3. Size:2019K  vishay
 irfd014 sihfd014.pdf pdf_icon

IRFD010

IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme

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Datasheet: IRFBE30SPBF , IRFBF20PBF , IRFBF20SPBF , IRFBF30PBF , IRFBF30S , IRFBF30SPBF , IRFBG20PBF , IRFBG30PBF , STF13NM60N , IRFD012 , IRFD014PBF , IRFD020 , IRFD020PBF , IRFD024PBF , IRFD110PBF , IRFD113PBF , IRFD120PBF .

History: TSM3455CX6

Keywords - IRFD010 MOSFET datasheet

 IRFD010 cross reference
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