IRFD020PBF Datasheet and Replacement
Type Designator: IRFD020PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DIP-4
IRFD020PBF substitution
IRFD020PBF Datasheet (PDF)
irfd020 irfd020pbf sihfd020.pdf

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd020 sihfd020.pdf

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd024pbf sihfd024.pdf

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
Datasheet: IRFBF30S , IRFBF30SPBF , IRFBG20PBF , IRFBG30PBF , IRFD010 , IRFD012 , IRFD014PBF , IRFD020 , 13N50 , IRFD024PBF , IRFD110PBF , IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF .
History: BSZ065N06LS5
Keywords - IRFD020PBF MOSFET datasheet
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IRFD020PBF lookup
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History: BSZ065N06LS5



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