IRFD110PBF Specs and Replacement
Type Designator: IRFD110PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 81 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: DIP-4
IRFD110PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFD110PBF datasheet
irfd110pbf.pdf
PD- 95927 IRFD110PbF Lead-Free 10/27/04 Document Number 91127 www.vishay.com 1 IRFD110PbF Document Number 91127 www.vishay.com 2 IRFD110PbF Document Number 91127 www.vishay.com 3 IRFD110PbF Document Number 91127 www.vishay.com 4 IRFD110PbF Document Number 91127 www.vishay.com 5 IRFD110PbF Document Number 91127 www.vishay.com 6 IRFD110PbF Peak Diode Recovery... See More ⇒
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall... See More ⇒
irfd110 sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall... See More ⇒
Detailed specifications: IRFBG20PBF, IRFBG30PBF, IRFD010, IRFD012, IRFD014PBF, IRFD020, IRFD020PBF, IRFD024PBF, SI2302, IRFD113PBF, IRFD120PBF, IRFD123PBF, IRFD210PBF, IRFD214PBF, IRFD220PBF, IRFD224PBF, IRFD310PBF
Keywords - IRFD110PBF MOSFET specs
IRFD110PBF cross reference
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