All MOSFET. IRFD110PBF Datasheet

 

IRFD110PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFD110PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.3 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: DIP-4

 IRFD110PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFD110PBF Datasheet (PDF)

 ..1. Size:1803K  international rectifier
 irfd110pbf.pdf

IRFD110PBF IRFD110PBF

PD- 95927IRFD110PbF Lead-Free10/27/04Document Number: 91127 www.vishay.com1IRFD110PbFDocument Number: 91127 www.vishay.com2IRFD110PbFDocument Number: 91127 www.vishay.com3IRFD110PbFDocument Number: 91127 www.vishay.com4IRFD110PbFDocument Number: 91127 www.vishay.com5IRFD110PbFDocument Number: 91127 www.vishay.com6IRFD110PbFPeak Diode Recovery

 ..2. Size:149K  vishay
 irfd110pbf sihfd110.pdf

IRFD110PBF IRFD110PBF

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall

 7.1. Size:174K  international rectifier
 irfd110.pdf

IRFD110PBF IRFD110PBF

 7.2. Size:147K  vishay
 irfd110 sihfd110.pdf

IRFD110PBF IRFD110PBF

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall

 8.1. Size:243K  vishay
 irfd113pbf sihfd113.pdf

IRFD110PBF IRFD110PBF

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

 8.2. Size:243K  vishay
 irfd113 sihfd113.pdf

IRFD110PBF IRFD110PBF

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STD3N62K3

 

 
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