IRFD110PBF Datasheet and Replacement
Type Designator: IRFD110PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 81 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: DIP-4
- MOSFET Cross-Reference Search
IRFD110PBF Datasheet (PDF)
irfd110pbf.pdf

PD- 95927IRFD110PbF Lead-Free10/27/04Document Number: 91127 www.vishay.com1IRFD110PbFDocument Number: 91127 www.vishay.com2IRFD110PbFDocument Number: 91127 www.vishay.com3IRFD110PbFDocument Number: 91127 www.vishay.com4IRFD110PbFDocument Number: 91127 www.vishay.com5IRFD110PbFDocument Number: 91127 www.vishay.com6IRFD110PbFPeak Diode Recovery
irfd110pbf sihfd110.pdf

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd110 sihfd110.pdf

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - IRFD110PBF MOSFET datasheet
IRFD110PBF cross reference
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History: MCH3484 | DMN30H4D0L



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