IRFD420PBF Datasheet and Replacement
Type Designator: IRFD420PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: DIP-4
IRFD420PBF substitution
IRFD420PBF Datasheet (PDF)
irfd420pbf sihfd420.pdf
IRFD420, SiHFD420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 3.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 24 COMPLIANT End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of ParallelingConfiguration Single Simple Drive Requirements
irfd420.pdf
PD- 95929IRFD420PbF Lead-Free10/28/04Document Number: 91135 www.vishay.com1IRFD420PbFDocument Number: 91135 www.vishay.com2IRFD420PbFDocument Number: 91135 www.vishay.com3IRFD420PbFDocument Number: 91135 www.vishay.com4IRFD420PbFDocument Number: 91135 www.vishay.com5IRFD420PbFDocument Number: 91135 www.vishay.com6IRFD420PbFDocument Number: 91
irfd420 sihfd420.pdf
IRFD420, SiHFD420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 3.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 24 COMPLIANT End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of ParallelingConfiguration Single Simple Drive Requirements
Datasheet: IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF , IRFD310PBF , IRFD320PBF , AO3401 , IRFD9010 , IRFD9012 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF , IRFD9110PBF , IRFD9113 .
History: SI1406DH | 2SK1082-01 | FDB8132
Keywords - IRFD420PBF MOSFET datasheet
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History: SI1406DH | 2SK1082-01 | FDB8132
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