IRFD9012 Specs and Replacement

Type Designator: IRFD9012

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.91 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: DIP-4

IRFD9012 substitution

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IRFD9012 datasheet

 7.1. Size:448K  international rectifier
irfd9010.pdf pdf_icon

IRFD9012

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 7.2. Size:1819K  international rectifier
irfd9014pbf.pdf pdf_icon

IRFD9012

PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number 91136 www.vishay.com 1 IRFD9014PbF Document Number 91136 www.vishay.com 2 IRFD9014PbF Document Number 91136 www.vishay.com 3 IRFD9014PbF Document Number 91136 www.vishay.com 4 IRFD9014PbF Document Number 91136 www.vishay.com 5 IRFD9014PbF Document Number 91136 www.vishay.com 6 IRFD9014PbF Peak Diode R... See More ⇒

 7.3. Size:177K  international rectifier
irfd9014.pdf pdf_icon

IRFD9012

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 7.4. Size:1751K  vishay
irfd9014pbf sihfd9014.pdf pdf_icon

IRFD9012

IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin... See More ⇒

Detailed specifications: IRFD210PBF, IRFD214PBF, IRFD220PBF, IRFD224PBF, IRFD310PBF, IRFD320PBF, IRFD420PBF, IRFD9010, AO3400A, IRFD9010PBF, IRFD9014PBF, IRFD9020PBF, IRFD9024PBF, IRFD9110PBF, IRFD9113, IRFD9120PBF, IRFD9210PBF

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