All MOSFET. IRFD9012 Datasheet

 

IRFD9012 Datasheet and Replacement


   Type Designator: IRFD9012
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.91 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: DIP-4
 

 IRFD9012 substitution

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IRFD9012 Datasheet (PDF)

 7.1. Size:448K  international rectifier
 irfd9010.pdf pdf_icon

IRFD9012

 7.2. Size:1819K  international rectifier
 irfd9014pbf.pdf pdf_icon

IRFD9012

PD- 95925IRFD9014PbF Lead-Free10/27/04Document Number: 91136 www.vishay.com1IRFD9014PbFDocument Number: 91136 www.vishay.com2IRFD9014PbFDocument Number: 91136 www.vishay.com3IRFD9014PbFDocument Number: 91136 www.vishay.com4IRFD9014PbFDocument Number: 91136 www.vishay.com5IRFD9014PbFDocument Number: 91136 www.vishay.com6IRFD9014PbFPeak Diode R

 7.3. Size:177K  international rectifier
 irfd9014.pdf pdf_icon

IRFD9012

 7.4. Size:1751K  vishay
 irfd9014pbf sihfd9014.pdf pdf_icon

IRFD9012

IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin

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Datasheet: IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF , IRFD310PBF , IRFD320PBF , IRFD420PBF , IRFD9010 , P60NF06 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF , IRFD9110PBF , IRFD9113 , IRFD9120PBF , IRFD9210PBF .

Keywords - IRFD9012 MOSFET datasheet

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