All MOSFET. IRFD9210PBF Datasheet

 

IRFD9210PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFD9210PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.9 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: DIP-4

 IRFD9210PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFD9210PBF Datasheet (PDF)

 ..1. Size:1772K  international rectifier
irfd9210pbf.pdf

IRFD9210PBF
IRFD9210PBF

PD- 95934IRFD9210PbF Lead-Free10/28/04Document Number: 91140 www.vishay.com1IRFD9210PbFDocument Number: 91140 www.vishay.com2IRFD9210PbFDocument Number: 91140 www.vishay.com3IRFD9210PbFDocument Number: 91140 www.vishay.com4IRFD9210PbFDocument Number: 91140 www.vishay.com5IRFD9210PbFDocument Number: 91140 www.vishay.com6IRFD9210PbFPeak Diode R

 ..2. Size:1553K  vishay
irfd9210pbf sihfd9210.pdf

IRFD9210PBF
IRFD9210PBF

IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS

 6.1. Size:171K  international rectifier
irfd9210.pdf

IRFD9210PBF
IRFD9210PBF

 6.2. Size:1552K  vishay
irfd9210 sihfd9210.pdf

IRFD9210PBF
IRFD9210PBF

IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS

 8.1. Size:1774K  international rectifier
irfd9220pbf.pdf

IRFD9210PBF
IRFD9210PBF

PD- 95918IRFD9220PbF Lead-Free10/28/04Document Number: 91141 www.vishay.com1IRFD9220PbFDocument Number: 91141 www.vishay.com2IRFD9220PbFDocument Number: 91141 www.vishay.com3IRFD9220PbFDocument Number: 91141 www.vishay.com4IRFD9220PbFDocument Number: 91141 www.vishay.com5IRFD9220PbFDocument Number: 91141 www.vishay.com6IRFD9220PbFPeak Diode R

 8.2. Size:172K  international rectifier
irfd9220.pdf

IRFD9210PBF
IRFD9210PBF

 8.3. Size:1675K  vishay
irfd9220pbf sihfd9220.pdf

IRFD9210PBF
IRFD9210PBF

IRFD9220, SiHFD9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of Para

 8.4. Size:1658K  vishay
irfd9220 sihfd9220.pdf

IRFD9210PBF
IRFD9210PBF

IRFD9220, SiHFD9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of ParallelingS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ZXMN3F30FH

 

 
Back to Top