IRFDC20PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFDC20PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 0.32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: DIP-4
IRFDC20PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFDC20PBF Datasheet (PDF)
irfdc20pbf sihfdc20.pdf
IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfdc20.pdf
PD- 95914IRFDC20PbF Lead-Free10/28/04Document Number: 91142 www.vishay.com1IRFDC20PbFDocument Number: 91142 www.vishay.com2IRFDC20PbFDocument Number: 91142 www.vishay.com3IRFDC20PbFDocument Number: 91142 www.vishay.com4IRFDC20PbFDocument Number: 91142 www.vishay.com5IRFDC20PbFDocument Number: 91142 www.vishay.com6IRFDC20PbFDocument Number: 91
irfdc20 sihfdc20.pdf
IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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