IRFF640 Specs and Replacement

Type Designator: IRFF640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220F

IRFF640 substitution

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IRFF640 datasheet

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IRFF640

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS IRFF640 N-Channel Power MOSFET TO-220F DESCRIPTION This advanced high voltage MOSFET is designed to stand high 1. GATE energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 2. DRAIN Designed for high volta... See More ⇒

Detailed specifications: IRFD9220PBF, IRFDC20PBF, IRFEA240, IRFF034, IRFF212, IRFF213, IRFF30B, IRFF30C, AO4407A, IRFG110, IRFG5110, IRFG5210, IRFG6110, IRFG9110, IRFH3702PBF, IRFH3707PBF, IRFH3707PBF-1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.