All MOSFET. IRFF640 Datasheet

 

IRFF640 Datasheet and Replacement


   Type Designator: IRFF640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220F
 

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IRFF640 Datasheet (PDF)

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IRFF640

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS IRFF640 N-Channel Power MOSFET TO-220F DESCRIPTION This advanced high voltage MOSFET is designed to stand high 1. GATE energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 2. DRAIN Designed for high volta

Datasheet: IRFD9220PBF , IRFDC20PBF , IRFEA240 , IRFF034 , IRFF212 , IRFF213 , IRFF30B , IRFF30C , AO3407 , IRFG110 , IRFG5110 , IRFG5210 , IRFG6110 , IRFG9110 , IRFH3702PBF , IRFH3707PBF , IRFH3707PBF-1 .

History: FDC633NF095 | FDC3612F095

Keywords - IRFF640 MOSFET datasheet

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