IRFH4257D
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFH4257D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.7
nC
trⓘ - Rise Time: 47
nS
Cossⓘ -
Output Capacitance: 365
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034
Ohm
Package: PQFN5X4
IRFH4257D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFH4257D
Datasheet (PDF)
..1. Size:852K international rectifier
irfh4257d.pdf
FastIRFET IRFH4257DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m(@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c
7.1. Size:588K international rectifier
irfh4253d.pdf
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m(@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
7.2. Size:561K international rectifier
irfh4251d.pdf
FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m(@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
7.3. Size:572K international rectifier
irfh4255d.pdf
FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 2.10 m(@VGS = 4.5V) Qg (typical) 10 23 nC ID 30 30 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
7.4. Size:588K infineon
irfh4253dpbf.pdf
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m(@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
7.5. Size:561K infineon
irfh4251dpbf.pdf
FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m(@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
Datasheet: WPB4002
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