IRFH6200PBF Specs and Replacement
Type Designator: IRFH6200PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 2890 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
Package: PQFN5X6
IRFH6200PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFH6200PBF datasheet
irfh6200pbf.pdf
IRFH6200TRPbF HEXFET Power MOSFET VDS 20 V RDS(on) max 0.99 m (@VGS = 4.5V) Qg (typical) 155 nC RG (typical) 1.3 ID 100 A PQFN 5X6 mm (@Tmb = 25 C) Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Features and Benefits Features Benefits Low RDSon ( 0.99m Lower Conduction Losses Low Thermal ... See More ⇒
irfh6200trpbf.pdf
IRFH6200TRPbF HEXFET Power MOSFET VDS 20 V RDS(on) max 0.99 m (@VGS = 4.5V) (@VGS = 2.5V) 1.50 Qg (typical) 155 nC RG (typical) 1.3 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap Switch Features Benefits Low RDSon ( 0.99m ) Lower Conduction Losses Low The... See More ⇒
irfh6200trpbf.pdf
IRFH6200TRPbF HEXFET Power MOSFET VDS 20 V RDS(on) max 0.99 m (@VGS = 4.5V) (@VGS = 2.5V) 1.50 Qg (typical) 155 nC RG (typical) 1.3 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap Switch Features Benefits Low RDSon ( 0.99m ) Lower Conduction Losses Low The... See More ⇒
Detailed specifications: IRFH5250PBF, IRFH5255PBF, IRFH5300PBF, IRFH5301PBF, IRFH5303PBF, IRFH5304PBF, IRFH5306PBF, IRFH5406PBF, IRF9540N, IRFH7004, IRFH7084, IRFH7085, IRFH7107, IRFH7110, IRFH7184, IRFH7185, IRFH7188
Keywords - IRFH6200PBF MOSFET specs
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