IRFH6200PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFH6200PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 49 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 155 nC
trⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 2890 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
Package: PQFN5X6
IRFH6200PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFH6200PBF Datasheet (PDF)
irfh6200pbf.pdf
IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99 m(@VGS = 4.5V)Qg (typical) 155 nCRG (typical) 1.3 ID 100 A PQFN 5X6 mm(@Tmb = 25C)ApplicationsCharge and discharge switch for battery applicationLoad switch for 12V (typical) busFeatures and BenefitsFeatures BenefitsLow RDSon ( 0.99m Lower Conduction LossesLow Thermal
irfh6200trpbf.pdf
IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99m(@VGS = 4.5V)(@VGS = 2.5V) 1.50Qg (typical) 155 nCRG (typical) 1.3 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap SwitchFeatures BenefitsLow RDSon ( 0.99m) Lower Conduction LossesLow The
irfh6200trpbf.pdf
IRFH6200TRPbFHEXFET Power MOSFETVDS 20 VRDS(on) max 0.99m(@VGS = 4.5V)(@VGS = 2.5V) 1.50Qg (typical) 155 nCRG (typical) 1.3 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap SwitchFeatures BenefitsLow RDSon ( 0.99m) Lower Conduction LossesLow The
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
