AM3446N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM3446N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 78 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSOP-6
AM3446N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM3446N Datasheet (PDF)
am3446n.pdf
Analog Power AM3446NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V6.5 Low thermal impedance 2044 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am3444n.pdf
Analog Power AM3444NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V6.5 Low thermal impedance 4044 @ VGS = 4.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
am3445p.pdf
Analog Power AM3445PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.038 @ VGS = -4.5V -5.6power loss and heat dissipation. Typical -200.054 @ VGS = -2.5V -4.8applications are DC-DC converters and power management in portabl
am3443p.pdf
Analog Power AM3443PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(OHM) ID (A)dissipation. Typical applications are DC-DC 65 @ V = -4.5V -4.5converters and power management in portable and GSbattery-powered products su
am3447p.pdf
Analog Power AM3447PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETsutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.070 @ VGS = -10V -4.4power loss and heat dissipation. Typical -40applications are DC-DC converters and 0.090 @ VGS = -4.5V -3.9power management in portable a
am3441p.pdf
Analog Power AM3441PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 90 @ VGS = -4.5V -2.9converters and power management in portable and battery-powered products such
am3443c.pdf
AM3443C AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3443C is available in a SOT-26 package. -20V/-4.3A, R = 48m(max.) @ V =-4.5V DS(ON) GS R = 68m(max.) @ V =-2.5V DS(ON) GS R = 100m(max.) @ V =-1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugged ORDERING INFORMATION Lead F
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
