Справочник MOSFET. AM3446N

 

AM3446N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM3446N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 0.4 V
   Максимально допустимый постоянный ток стока |Id|: 6.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 7 nC
   Время нарастания (tr): 17 ns
   Выходная емкость (Cd): 78 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.032 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для AM3446N

 

 

AM3446N Datasheet (PDF)

 ..1. Size:331K  analog power
am3446n.pdf

AM3446N
AM3446N

Analog Power AM3446NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V6.5 Low thermal impedance 2044 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:327K  analog power
am3444n.pdf

AM3446N
AM3446N

Analog Power AM3444NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V6.5 Low thermal impedance 4044 @ VGS = 4.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.2. Size:218K  analog power
am3445p.pdf

AM3446N
AM3446N

Analog Power AM3445PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.038 @ VGS = -4.5V -5.6power loss and heat dissipation. Typical -200.054 @ VGS = -2.5V -4.8applications are DC-DC converters and power management in portabl

 9.3. Size:87K  analog power
am3443p.pdf

AM3446N
AM3446N

Analog Power AM3443PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(OHM) ID (A)dissipation. Typical applications are DC-DC 65 @ V = -4.5V -4.5converters and power management in portable and GSbattery-powered products su

 9.4. Size:163K  analog power
am3447p.pdf

AM3446N
AM3446N

Analog Power AM3447PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETsutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.070 @ VGS = -10V -4.4power loss and heat dissipation. Typical -40applications are DC-DC converters and 0.090 @ VGS = -4.5V -3.9power management in portable a

 9.5. Size:200K  analog power
am3441p.pdf

AM3446N
AM3446N

Analog Power AM3441PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 90 @ VGS = -4.5V -2.9converters and power management in portable and battery-powered products such

 9.6. Size:599K  ait semi
am3443c.pdf

AM3446N
AM3446N

AM3443C AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3443C is available in a SOT-26 package. -20V/-4.3A, R = 48m(max.) @ V =-4.5V DS(ON) GS R = 68m(max.) @ V =-2.5V DS(ON) GS R = 100m(max.) @ V =-1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugged ORDERING INFORMATION Lead F

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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