AM3459P Specs and Replacement

Type Designator: AM3459P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: TSOP-6

AM3459P substitution

- MOSFET ⓘ Cross-Reference Search

 

AM3459P datasheet

 ..1. Size:129K  analog power
am3459p.pdf pdf_icon

AM3459P

Analog Power AM3459P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) ( )ID (A) this device ideal for use in power management 0.310 @ VGS = -10V 2.1 circuitry. Typical applications are PWMDC-DC -60 converters, power management in... See More ⇒

 9.1. Size:203K  analog power
am3456ne.pdf pdf_icon

AM3459P

Analog Power AM3456NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( )ID (A) power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3 applications are DC-DC converters and 30 power management in portable and 0.044 @ VGS = 4.5V 4.5 ... See More ⇒

 9.2. Size:324K  analog power
am3458n.pdf pdf_icon

AM3459P

Analog Power AM3458N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM ... See More ⇒

 9.3. Size:140K  analog power
am3457pe.pdf pdf_icon

AM3459P

Analog Power AM3457PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0 S applications are DC-DC converters and -30.0 0.083 @ VG = -4.5V -3.4 power management in port... See More ⇒

Detailed specifications: AM3447P, AM3454N, AM3455P, AM3456N, AM3456NE, AM3457P, AM3457PE, AM3458N, IRF640N, AM3460N, AM3463P, AM3470N, AM3471P, AM3472N, AM3474N, AM3483, AM3490N

Keywords - AM3459P MOSFET specs

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