AM3459P. Аналоги и основные параметры

Наименование производителя: AM3459P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm

Тип корпуса: TSOP-6

Аналог (замена) для AM3459P

- подборⓘ MOSFET транзистора по параметрам

 

AM3459P даташит

 ..1. Size:129K  analog power
am3459p.pdfpdf_icon

AM3459P

Analog Power AM3459P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) ( )ID (A) this device ideal for use in power management 0.310 @ VGS = -10V 2.1 circuitry. Typical applications are PWMDC-DC -60 converters, power management in

 9.1. Size:203K  analog power
am3456ne.pdfpdf_icon

AM3459P

Analog Power AM3456NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( )ID (A) power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3 applications are DC-DC converters and 30 power management in portable and 0.044 @ VGS = 4.5V 4.5

 9.2. Size:324K  analog power
am3458n.pdfpdf_icon

AM3459P

Analog Power AM3458N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.3. Size:140K  analog power
am3457pe.pdfpdf_icon

AM3459P

Analog Power AM3457PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0 S applications are DC-DC converters and -30.0 0.083 @ VG = -4.5V -3.4 power management in port

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