AM3531C Datasheet and Replacement
Type Designator: AM3531C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: TSOP-6
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AM3531C Datasheet (PDF)
am3531c.pdf

Analog Power AM3531CN & P-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.058 @ VGS = 4.5V 3.7power loss and heat dissipation. Typical 30applications are DC-DC converters and 0.082 @ V = 2.5V 3.1GSpower management in portable a
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TSM3N90CZ | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ
Keywords - AM3531C MOSFET datasheet
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History: TSM3N90CZ | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ



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