AM3850C Datasheet and Replacement
Type Designator: AM3850C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TSOP-6
AM3850C substitution
AM3850C Datasheet (PDF)
am3850c.pdf

Analog Power AM3850CN & P-Channel 25-V (D-S) MOSFETThese miniature surface mount MOSFETs VDS (V) rDS(on) ()ID (A)utilize High Cell Density process. Low 0.45 @ VGS = 4.5V 1.2rDS(on) assures minimal power loss and 25conserves energy, making this device ideal 0.72 @ VGS = 2.5V 1.0for use in power management circuitry. 1.09 @ VGS = -4.5V -0.85-25Typical applications are D
Datasheet: AM3520C , AM3524C , AM3531C , AM3548C , AM3560C , AM3599C , AM35N03-40D , AM35N03-59D , IRF4905 , AM3902N , AM3904N , AM3906N , AM3921P , AM3922N , AM3925P , AM3930N , AM3932N .
History: AUIRF3315S | DMP2540UCB9 | IRFS7430PBF | UTT6NP10G-S08-R | SIA537EDJ | 2SK2625LS | QM2N7002E3K1
Keywords - AM3850C MOSFET datasheet
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History: AUIRF3315S | DMP2540UCB9 | IRFS7430PBF | UTT6NP10G-S08-R | SIA537EDJ | 2SK2625LS | QM2N7002E3K1



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