All MOSFET. AM3850C Datasheet

 

AM3850C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM3850C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.64 nC
   trⓘ - Rise Time: 8.5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TSOP-6

 AM3850C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM3850C Datasheet (PDF)

 ..1. Size:522K  analog power
 am3850c.pdf

AM3850C AM3850C

Analog Power AM3850CN & P-Channel 25-V (D-S) MOSFETThese miniature surface mount MOSFETs VDS (V) rDS(on) ()ID (A)utilize High Cell Density process. Low 0.45 @ VGS = 4.5V 1.2rDS(on) assures minimal power loss and 25conserves energy, making this device ideal 0.72 @ VGS = 2.5V 1.0for use in power management circuitry. 1.09 @ VGS = -4.5V -0.85-25Typical applications are D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P1703BDG | J112G | IXTX17N120L

 

 
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