AM3850C Specs and Replacement
Type Designator: AM3850C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TSOP-6
AM3850C substitution
- MOSFET ⓘ Cross-Reference Search
AM3850C datasheet
am3850c.pdf
Analog Power AM3850C N & P-Channel 25-V (D-S) MOSFET These miniature surface mount MOSFETs VDS (V) rDS(on) ( )ID (A) utilize High Cell Density process. Low 0.45 @ VGS = 4.5V 1.2 rDS(on) assures minimal power loss and 25 conserves energy, making this device ideal 0.72 @ VGS = 2.5V 1.0 for use in power management circuitry. 1.09 @ VGS = -4.5V -0.85 -25 Typical applications are D... See More ⇒
Detailed specifications: AM3520C, AM3524C, AM3531C, AM3548C, AM3560C, AM3599C, AM35N03-40D, AM35N03-59D, IRF4905, AM3902N, AM3904N, AM3906N, AM3921P, AM3922N, AM3925P, AM3930N, AM3932N
Keywords - AM3850C MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SM1F03NSK | AM30N03-40D
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