AM3930N Specs and Replacement

Type Designator: AM3930N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: TSOP-6

AM3930N substitution

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AM3930N datasheet

 ..1. Size:151K  analog power
 am3930n.pdf pdf_icon

AM3930N

Analog Power AM3930N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p... See More ⇒

 9.1. Size:235K  analog power
 am3932n.pdf pdf_icon

AM3930N

Analog Power AM3932N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s... See More ⇒

 9.2. Size:262K  analog power
 am3932ne.pdf pdf_icon

AM3930N

Analog Power AM3932NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products su... See More ⇒

 9.3. Size:115K  analog power
 am3933p.pdf pdf_icon

AM3930N

Analog Power AM3933P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5 -26.5 converters, power management in... See More ⇒

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Detailed specifications: AM35N03-59D, AM3850C, AM3902N, AM3904N, AM3906N, AM3921P, AM3922N, AM3925P, SKD502T, AM3932N, AM3932NE, AM3933P, AM3940N, AM3940NE, AM3949P, AM3961P, AM3962N

Keywords - AM3930N MOSFET specs

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