AM3930N. Аналоги и основные параметры

Наименование производителя: AM3930N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm

Тип корпуса: TSOP-6

Аналог (замена) для AM3930N

- подборⓘ MOSFET транзистора по параметрам

 

AM3930N даташит

 ..1. Size:151K  analog power
 am3930n.pdf pdf_icon

AM3930N

Analog Power AM3930N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p

 9.1. Size:235K  analog power
 am3932n.pdf pdf_icon

AM3930N

Analog Power AM3932N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s

 9.2. Size:262K  analog power
 am3932ne.pdf pdf_icon

AM3930N

Analog Power AM3932NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products su

 9.3. Size:115K  analog power
 am3933p.pdf pdf_icon

AM3930N

Analog Power AM3933P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5 -26.5 converters, power management in

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