All MOSFET. AM3993P Datasheet

 

AM3993P Datasheet and Replacement


   Type Designator: AM3993P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TSOP-6
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AM3993P Datasheet (PDF)

 ..1. Size:146K  analog power
 am3993p.pdf pdf_icon

AM3993P

Analog Power AM3993PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A)this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -10V -2.5-30converters, power management in po

 9.1. Size:134K  analog power
 am3998n.pdf pdf_icon

AM3993P

Analog Power AM3998NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.058 @ VGS = 4.5 V 3.7converters and power management in portable and 20battery-powere

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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