AM40N06-28D Specs and Replacement

Type Designator: AM40N06-28D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO-252

AM40N06-28D substitution

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AM40N06-28D datasheet

 ..1. Size:74K  analog power
 am40n06-28d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N06-28D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35 converters and power management in portable and 60 30 @ VGS = 4.5V 34 batte... See More ⇒

 8.1. Size:297K  analog power
 am40n04-30d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N04-30D N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 10V 33 Low thermal impedance 40 42 @ VGS = 4.5V 29 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

 8.2. Size:291K  analog power
 am40n08-30d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N08-30D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 26 @ VGS = 10V 36 Low thermal impedance 80 36 @ VGS = 4.5V 31 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

 8.3. Size:276K  analog power
 am40n04-30de.pdf pdf_icon

AM40N06-28D

Analog Power AM40N04-30DE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33 converters and power management in portable and 40 42 @ VGS = 4.5V 29 batt... See More ⇒

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Detailed specifications: AM3961P, AM3962N, AM3962NE, AM3993P, AM3998N, AM40N04-20D, AM40N04-30D, AM40N04-30DE, TK10A60D, AM40N08-30D, AM40N10-28D, AM40N10-30D, AM40N10-30I, AM40N20-180P, AM40P02-20D, AM40P03-20D, AM40P03-20I

Keywords - AM40N06-28D MOSFET specs

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