AM40N06-28D. Аналоги и основные параметры

Наименование производителя: AM40N06-28D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: TO-252

Аналог (замена) для AM40N06-28D

- подборⓘ MOSFET транзистора по параметрам

 

AM40N06-28D даташит

 ..1. Size:74K  analog power
 am40n06-28d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N06-28D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35 converters and power management in portable and 60 30 @ VGS = 4.5V 34 batte

 8.1. Size:297K  analog power
 am40n04-30d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N04-30D N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 10V 33 Low thermal impedance 40 42 @ VGS = 4.5V 29 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.2. Size:291K  analog power
 am40n08-30d.pdf pdf_icon

AM40N06-28D

Analog Power AM40N08-30D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 26 @ VGS = 10V 36 Low thermal impedance 80 36 @ VGS = 4.5V 31 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 8.3. Size:276K  analog power
 am40n04-30de.pdf pdf_icon

AM40N06-28D

Analog Power AM40N04-30DE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33 converters and power management in portable and 40 42 @ VGS = 4.5V 29 batt

ПОКАЗАТЬ ЕЩЁ

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