All MOSFET. AM4402N Datasheet

 

AM4402N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4402N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SO-8

 AM4402N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4402N Datasheet (PDF)

 ..1. Size:320K  analog power
am4402n.pdf

AM4402N AM4402N

Analog Power AM4402NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)38 @ VGS = 10V7.4 Low thermal impedance 6050 @ VGS = 4.5V6.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:320K  analog power
am4401p.pdf

AM4402N AM4402N

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.2. Size:308K  analog power
am4400n.pdf

AM4402N AM4402N

Analog Power AM4400NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)82 @ VGS = 10V5.1 Low thermal impedance 60115 @ VGS = 4.5V4.3 Fast switching speed Typical Applications: Motor Drives Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 9.3. Size:203K  analog power
am4409p.pdf

AM4402N AM4402N

Analog Power AM4409PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5converte

 9.4. Size:313K  analog power
am4404n.pdf

AM4402N AM4402N

Analog Power AM4404NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)8.5 @ VGS = 10V16 Low thermal impedance 3016 @ VGS = 4.5V12 Fast switching speed Typical Applications: SO-8 DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS

 9.5. Size:210K  analog power
am4407p.pdf

AM4402N AM4402N

Analog Power AM4407PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15-30circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11converter

 9.6. Size:117K  analog power
am4407pe.pdf

AM4402N AM4402N

Analog Power AM4407PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15-30converters and power management in portable and 13 @ VGS = -4.5V -11ba

 9.7. Size:307K  analog power
am4403p.pdf

AM4402N AM4402N

Analog Power AM4403PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)560 @ VGS = -10V -2.0 Low thermal impedance -150580 @ VGS = -4.5V -1.9 Fast switching speed Typical Applications: SO-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.8. Size:199K  analog power
am4400ne.pdf

AM4402N AM4402N

Analog Power AM4400NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 4.660battery-powered products suc

 9.9. Size:683K  ait semi
am4403.pdf

AM4402N AM4402N

AiT Semiconductor Inc. AM4403 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM4403 is available in a SOP8 package. -20V/-12.2A, R = 14m(max.) @ V = -4.5V DS(ON) GSR = 20m(max.) @ V = -2.5V DS(ON) GSR = 32m(max.) @ V = -1.8V DS(ON) GS Reliable and Rugged Available in a SOP8 package. ORDERING INFORMATION APPLICATION

 9.10. Size:475K  ait semi
am4407.pdf

AM4402N AM4402N

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-7.5A, R = 19m(typ)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell des

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