AM4402N. Аналоги и основные параметры

Наименование производителя: AM4402N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 126 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm

Тип корпуса: SO-8

Аналог (замена) для AM4402N

- подборⓘ MOSFET транзистора по параметрам

 

AM4402N даташит

 ..1. Size:320K  analog power
am4402n.pdfpdf_icon

AM4402N

Analog Power AM4402N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 38 @ VGS = 10V 7.4 Low thermal impedance 60 50 @ VGS = 4.5V 6.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:320K  analog power
am4401p.pdfpdf_icon

AM4402N

Analog Power AM4401P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = -10V -3.6 Low thermal impedance -150 170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.2. Size:308K  analog power
am4400n.pdfpdf_icon

AM4402N

Analog Power AM4400N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 82 @ VGS = 10V 5.1 Low thermal impedance 60 115 @ VGS = 4.5V 4.3 Fast switching speed Typical Applications Motor Drives Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 9.3. Size:203K  analog power
am4409p.pdfpdf_icon

AM4402N

Analog Power AM4409P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2 this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5 converte

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