All MOSFET. AM4403 Datasheet

 

AM4403 MOSFET. Datasheet pdf. Equivalent

Type Designator: AM4403

Marking Code: M8

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 12.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 388 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SOP-8

AM4403 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4403 Datasheet (PDF)

0.1. am4403p.pdf Size:307K _analog_power

AM4403
AM4403

Analog Power AM4403P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 560 @ VGS = -10V -2.0 • Low thermal impedance -150 580 @ VGS = -4.5V -1.9 • Fast switching speed Typical Applications: SO-8 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABS

0.2. am4403.pdf Size:683K _ait_semi

AM4403
AM4403

AiT Semiconductor Inc. AM4403 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM4403 is available in a SOP8 package.  -20V/-12.2A, R = 14mΩ(max.) @ V = -4.5V DS(ON) GS R = 20mΩ(max.) @ V = -2.5V DS(ON) GS R = 32mΩ(max.) @ V = -1.8V DS(ON) GS  Reliable and Rugged  Available in a SOP8 package. ORDERING INFORMATION APPLICATION 

 9.1. am4402n.pdf Size:320K _analog_power

AM4403
AM4403

Analog Power AM4402N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 38 @ VGS = 10V 7.4 • Low thermal impedance 60 50 @ VGS = 4.5V 6.5 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

9.2. am4401p.pdf Size:320K _analog_power

AM4403
AM4403

Analog Power AM4401P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 160 @ VGS = -10V -3.6 • Low thermal impedance -150 170 @ VGS = -5.5V -3.5 • Fast switching speed Typical Applications: SOIC-8 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABS

 9.3. am4404n.pdf Size:313K _analog_power

AM4403
AM4403

Analog Power AM4404N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 8.5 @ VGS = 10V 16 • Low thermal impedance 30 16 @ VGS = 4.5V 12 • Fast switching speed Typical Applications: SO-8 • DC/DC Conversion • Power Routing • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWIS

9.4. am4409p.pdf Size:203K _analog_power

AM4403
AM4403

Analog Power AM4409P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m(Ω)ID (A) minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2 this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5 converte

 9.5. am4407p.pdf Size:210K _analog_power

AM4403
AM4403

Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m(Ω) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15 -30 circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11 converter

9.6. am4400ne.pdf Size:199K _analog_power

AM4403
AM4403

Analog Power AM4400NE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω)ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V ±4.6 60 battery-powered products suc

9.7. am4400n.pdf Size:308K _analog_power

AM4403
AM4403

Analog Power AM4400N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 82 @ VGS = 10V 5.1 • Low thermal impedance 60 115 @ VGS = 4.5V 4.3 • Fast switching speed Typical Applications: • Motor Drives • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

9.8. am4407pe.pdf Size:117K _analog_power

AM4403
AM4403

Analog Power AM4407PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15 -30 converters and power management in portable and 13 @ VGS = -4.5V -11 ba

9.9. am4407.pdf Size:475K _ait_semi

AM4403
AM4403

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement  30V/-12.0A, R = 12mΩ(typ)@V =-10V DS(ON) GS mode power field effect transistor is produced using  -30V/-7.5A, R = 19mΩ(typ)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density cell des

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