AiT Semiconductor Inc. AM4403 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM4403 is available in a SOP8 package. -20V/-12.2A, R = 14m(max.) @ V = -4.5V DS(ON) GSR = 20m(max.) @ V = -2.5V DS(ON) GSR = 32m(max.) @ V = -1.8V DS(ON) GS Reliable and Rugged Available in a SOP8 package. ORDERING INFORMATION APPLICATION

Analog Power AM4403PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)560 @ VGS = -10V -2.0 Low thermal impedance -150580 @ VGS = -4.5V -1.9 Fast switching speed Typical Applications: SO-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

Analog Power AM4400NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)82 @ VGS = 10V5.1 Low thermal impedance 60115 @ VGS = 4.5V4.3 Fast switching speed Typical Applications: Motor Drives Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

Analog Power AM4409PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5converte

Analog Power AM4404NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)8.5 @ VGS = 10V16 Low thermal impedance 3016 @ VGS = 4.5V12 Fast switching speed Typical Applications: SO-8 DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS

Analog Power AM4402NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)38 @ VGS = 10V7.4 Low thermal impedance 6050 @ VGS = 4.5V6.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM4407PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15-30circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11converter

Analog Power AM4407PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15-30converters and power management in portable and 13 @ VGS = -4.5V -11ba

Analog Power AM4400NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 4.660battery-powered products suc

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-7.5A, R = 19m(typ)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell des