12N65KL-TF MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N65KL-TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 51 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 39 nC
Rise Time (tr): 125 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-220F
12N65KL-TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N65KL-TF Datasheet (PDF)
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-TFEATURESStatic Drain-Source On-Resistance: R
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
Datasheet: ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , 2N60 , 20N03 , 2N0609 , 2SK2080 , 2SK2652 , 2SK2654 , 2SK3530 , 2SK3681 , 3N150S .
History: 2N3796
History: 2N3796
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