20N03 Datasheet and Replacement

20N03www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUTE

isc N-Channel MOSFET Transistor 20N03FEATURESDrain Current- I = 20A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies,converters,AC and DC motor controlsAB

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

EMB20N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID12AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/DDesigner's Data SheetMTD20N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate20 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.035 OHMhigh energy

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20N03HDL/DDesigner's Data SheetMTD20N03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELNChannel EnhancementMode Silicon Gate20 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.035 OHMhigh energy

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviated symbol : Q

RSQ020N03FRA Nch 30V 2A Power MOSFET DatasheetAEC-Q101 QualifiedlOutline(6) VDSS30V(5) TSMT6(4) RDS(on) (Max.)134mW(1) ID2.0A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plat

RSS120N03 Transistors Switching (30V, 12A) RSS120N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Equivale

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviated symbol : Q

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark

SQM120N03-1m5LVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0015 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0020 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Single AEC-Q10

BSO220N03MD GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Dual N-channelR V =10 V 22mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 27GS Low FOMSW for High Frequency SMPSI 7.7 AD 100% Avalanche tested Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

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BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

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BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

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BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

BSO220N03MD GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Dual N-channelR V =10 V 22mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 27GS Low FOMSW for High Frequency SMPSI 7.7 AD 100% Avalanche tested Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

IPB120N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 3mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N03S4L-03 PG-TO263-3-2 -

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NTD20N03L27, NVD20N03L27Power MOSFET20 A, 30 V, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.The drain-to-source diode has a ideal fast but soft recovery.http://onsemi.comFeatures Ultra-Low RDS(on), Sin

NTD20N03L27,NVD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in. http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.Features20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27, NVD20N03L27Power MOSFET20 A, 30 V, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.The drain-to-source diode has a ideal fast but soft recovery.http://onsemi.comFeatures Ultra-Low RDS(on), Sin

UNISONIC TECHNOLOGIES CO., LTD UT120N03 Preliminary Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTCs 1advanced trench technology to provide customers with a minimum TO-220on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertorsor synchronous recti

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UTT220N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT220N03 is a N-channel MOSFET, using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT220N03 is generally applied in DC to DC convertor or synchronous rectification

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain1.Gate3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

Spec. No. : C737Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03AQ8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m(typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Spec. No. : C805Q8 Issued Date : 2009.12.30 CYStech Electronics Corp.Revised Date :2011.03.21 Page No. : 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN20N03Q8 BVDSS 30V 60VID 8A 0.115ARDSON(MAX) 20m 5 Description The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

Spec. No. : C396Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03Q8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m(typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c

GOFORD120N03DESCRIPTIONThe 120N03 uses advanced trench technologyVDS RDS(ON) IDAnd design to provide excellent RDS (ON ) with30V 2.5m 120ALow gate charge . It can be used in a wideVanety of applications .GENERAL FEATURES VDS = 30 V, ID = 120 ARDS(ON)

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing

BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications

BRCS20N03IP Rev.A Nov.-2019 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast speed switching. Halogen-free Product. / Applications

BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DSI =42A (V = 20V) D GS RDS(ON)@10V12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su

BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC

BRD20N03(BRCS20N03D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

BRCS020N03ZC Rev.A Jan.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H

BRI20N03(BRCS20N03I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

BRCS020N03RA Rev.A Jun.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These de

LJ2015-55CS220N03MD N T =25 1.13AT =25 0.83AP WtotT =25 2AT =25 1.4AI V =10V,T =25 6 AD GS AI V =10V,T =90 4.4 AD GS AI T =25, 54 AD AV 20 VGST +150

DH020N03P160A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 160AD2 Features Low on resistance Low gate charge Fast switching

DH020N03/DH020N03F/DH020N03I/DH020N03E/DH020N03B/DH020N03D200A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.0mDS(on) (TYP)standard.13 SI = 200AD2 Features Low on res

N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste

BRD20N03(CS20N03D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power RDS(ON) 15m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremel

Jan 2016HRLE320N03K30V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit Low Dense Cell DesignBVDSS 30 V Reliable and RuggedID 5A Advanced Trench Process TechnologyRDS(on), typ @10V 27 RDS(on), typ @4.5V 33 ApplicationPackage & Internal Circuit Power Management in Inverter SystemSOT-23 Synchronous Rectification DSGAbsolute Maximum Ratin

SSM20N03S,PN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETDynamic dv/dt rating BVDSS 30VDRepetitive-avalanche rated RDS(ON) 52m Fast switching ID 20AGSimple drive requirementSDescriptionPower MOSFETs from Silicon Standard provide theGDdesigner with the best combination of fast switching,S TO-263ruggedized device design, low on-resistance and cost-effectiveness.The TO-

SL20N03 30V/20A N-Channel MOSFETFeatures Trench Power LV MOSFET technologyProduct Summary High density cell design for low RDS(ON)VDS RDS(ON) MAX ID MAX35m@10VD230V S1 20AD145m@4.5VApplication Battery protection Load switchD Power managementDDGS20N03 : Device code20N03XXXXXX : CodeTO-252 top viewSchematic diagramXXXXXXDS

SL120N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ020N03LG4 uses Wayon's 4th generation power trench SGMOSFET technology that has been especially tailored to minimize SSSSGSthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

EMB20N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID12AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI20N03TO-252 Description DThe SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Scan be used in a wide variety of applications. GGeneral Features Equivalent CircuitRDS(ON) DVDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R

HTS120N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level9.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

HTM120N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level9.7RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness18.5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number

HTM120N03P P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level8.4RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness11RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested28 AID Lead FreeApplication Hard Switching and High Speed CircuitDrainDFN3.3x3.3 DC/DC in Telecoms and InductrialGateSrcPart Number Pa

MTD20N03HDLT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFET

20N03L TO252www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETA

NTD20N03L27www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETAB

ME20N03www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

VBZE20N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.011 at VGS = 10 V 5030 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

VBZQA120N03www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 160APPLICATIONS3018 nC0.0025 at VGS = 4.5 V 130 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLU

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

HMS120N03DN-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

Isc N-Channel MOSFET Transistor UT20N03FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag