20N03 - описание и поиск аналогов

20N03 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLUTE

isc N-Channel MOSFET Transistor 20N03 FEATURES Drain Current- I = 20A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls AB

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L 8.5m @10V 30 V 20A 12m @4.5V DESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N03HDL/D Designer's Data Sheet MTD20N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 20 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.035 OHM high energy

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20N03HDL/D Designer's Data Sheet MTD20N03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL N Channel Enhancement Mode Silicon Gate 20 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.035 OHM high energy

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol Q

RSQ020N03FRA Nch 30V 2A Power MOSFET Datasheet AEC-Q101 Qualified lOutline (6) VDSS 30V (5) TSMT6 (4) RDS(on) (Max.) 134mW (1) ID 2.0A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plat

RSS120N03 Transistors Switching (30V, 12A) RSS120N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.0 0.2 3) Small and Surface Mount Package (SOP8). Applications 0.2 0.1 Power switching, DC / DC converter. 0.4 0.1 1.27 0.1 Structure Each lead has same dimensions Silicon N-channel MOS FET Equivale

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol Q

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

RTQ020N03 RTQ020N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ020N03FRA RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark

SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.0015 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0020 Package with Low Thermal Resistance ID (A) 120 100 % Rg and UIS Tested Configuration Single AEC-Q10

BSO220N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Dual N-channel R V =10 V 22 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 27 GS Low FOMSW for High Frequency SMPS I 7.7 A D 100% Avalanche tested Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

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BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 1 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @

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BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

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BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

BSO220N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Dual N-channel R V =10 V 22 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 27 GS Low FOMSW for High Frequency SMPS I 7.7 A D 100% Avalanche tested Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

IPB120N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 3 mW DS(on),max Automotive AEC Q101 qualified I 120 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 Green package (lead free) 100% Avalanche tested Type Package Ordering Code Marking IPB120N03S4L-03 PG-TO263-3-2 -

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NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. 20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. Features 20 A, 30 V, RDS(on) = 27 mW

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

UNISONIC TECHNOLOGIES CO., LTD UT120N03 Preliminary Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTC s 1 advanced trench technology to provide customers with a minimum TO-220 on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous recti

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UTT220N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT220N03 is a N-channel MOSFET, using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT220N03 is generally applied in DC to DC convertor or synchronous rectification

UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L 8.5m @10V 30 V 20A 12m @4.5V DESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Spec. No. C805Q8 Issued Date 2009.12.30 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN20N03Q8 BVDSS 30V 60V ID 8A 0.115A RDSON(MAX) 20m 5 Description The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

Spec. No. C396Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2014.02.14 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03Q8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m (typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c

GOFORD 120N03 DESCRIPTION The 120N03 uses advanced trench technology VDS RDS(ON) ID And design to provide excellent RDS (ON ) with 30V 2.5m 120A Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES VDS = 30 V, ID = 120 A RDS(ON)

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications

BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DS I =42A (V = 20V) D GS R DS(ON)@10V 12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su

BRD20N03(BRCS20N03D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

BRCS020N03ZC Rev.A Jan.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H

BRI20N03(BRCS20N03I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

BRCS020N03RA Rev.A Jun.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These de

DH020N03/DH020N03F/DH020N03I/ DH020N03E/DH020N03B/DH020N03D 200A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.0m DS(on) (TYP) standard. 1 3 S I = 200A D 2 Features Low on res

N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste

SLD120N03TB 30V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 111A, 30V, RDS(on),Typ = 2.5m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 65nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in

ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power RDS(ON) 15m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremel

Jan 2016 HRLE320N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design BVDSS 30 V Reliable and Rugged ID 5A Advanced Trench Process Technology RDS(on), typ @10V 27 RDS(on), typ @4.5V 33 Application Package & Internal Circuit Power Management in Inverter System SOT-23 Synchronous Rectification D S G Absolute Maximum Ratin

SSM20N03S,P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BVDSS 30V D Repetitive-avalanche rated RDS(ON) 52m Fast switching ID 20A G Simple drive requirement S Description Power MOSFETs from Silicon Standard provide the G D designer with the best combination of fast switching, S TO-263 ruggedized device design, low on-resistance and cost-effectiveness. The TO-

SL20N03 30V/20A N-Channel MOSFET Features Trench Power LV MOSFET technology Product Summary High density cell design for low RDS(ON) VDS RDS(ON) MAX ID MAX 35m @10V D2 30V S1 20A D1 45m @4.5V Application Battery protection Load switch D Power management D D G S 20N03 Device code 20N03 XXXXXX Code TO-252 top view Schematic diagram XXXXXX D S

SL120N03R N-Channel Enhancement Mode Power MOSFET Description This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30V I

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ020N03LG4 uses Wayon's 4th generation power trench S G MOSFET technology that has been especially tailored to minimize S S S S G S the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8L switching a

WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20

JMTK120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 20A Load Switch RDS(ON)

JMTQ120N03D Description JMT N-channel Enhancement Mode Power MOSFET Features Applications Load Switch 30V, 15A PWM Application RDS(ON)

JMTV120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 12A Load Switch RDS(ON)

JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 18A Load Switch RDS(ON)

N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI20N03 TO-252 Description D The SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It S can be used in a wide variety of applications. G General Features Equivalent Circuit RDS(ON) D VDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R

HTS120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 9.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu

HTN020N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 1.6 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN5x6 Gate Src Part Number P

HTM120N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 9.7 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 18.5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number

HTM120N03P P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 11 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 28 A ID Lead Free Application Hard Switching and High Speed Circuit Drain DFN3.3x3.3 DC/DC in Telecoms and Inductrial Gate Src Part Number Pa

MTD20N03HDLT4G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET

20N03L TO252 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET A

NTD20N03L27 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB

ME20N03 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU

VBZE20N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.011 at VGS = 10 V 50 30 28nC 0.016 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO

VBZQA120N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 160 APPLICATIONS 30 18 nC 0.0025 at VGS = 4.5 V 130 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLU

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package

HM120N03 N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

HMS120N03D N-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

Isc N-Channel MOSFET Transistor UT20N03 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

AP20N03D 30V N-Channel Enhancement Mode MOSFET Description The AP20N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =20 A DS D R

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R