AM4502CE MOSFET. Datasheet pdf. Equivalent
Type Designator: AM4502CE
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOIC-8
AM4502CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM4502CE Datasheet (PDF)
am4502ce.pdf
Analog Power AM4502CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ V = 4.5V 8.4GS30converters and power management in portable and 16 @ V = 10V 10.0
am4502c.pdf
Analog Power AM4502CN & P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)16 @ VGS = 10V9.4 Low thermal impedance 3020 @ VGS = 4.5V8.4 Fast switching speed 24 @ VGS = -10V -7.9-3038 @ VGS = -4.5V -6.6Typical Applications: DC/DC Conversion Power Routing Motor Drives A
am4502ac.pdf
Analog Power AM4502ACP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 31 @ VGS = 4.5V 6.930battery-powered product
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
