AM4531C Specs and Replacement

Type Designator: AM4531C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOIC-8

AM4531C substitution

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AM4531C datasheet

 ..1. Size:221K  analog power
 am4531c.pdf pdf_icon

AM4531C

Analog Power AM4531C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 2.5V 4.2 GS 30 converters and power management in portable and 58 @ V = 4.5V 5.0 G... See More ⇒

 9.1. Size:83K  analog power
 am4536c.pdf pdf_icon

AM4531C

Analog Power AM4536C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8 GS 30 converters and power management in portable and 28 @ V = 10V 7.1 G... See More ⇒

 9.2. Size:163K  analog power
 am4534c.pdf pdf_icon

AM4531C

Analog Power AM4534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.0 30 circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0 GS conver... See More ⇒

 9.3. Size:225K  analog power
 am4530c.pdf pdf_icon

AM4531C

Analog Power AM4530C P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 GS... See More ⇒

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Detailed specifications: AM4502CE, AM4512AC, AM4512C, AM4512CE, AM4520H, AM4528C, AM4530C, AM4530CE, 7N65, AM4533C, AM4534C, AM4536C, AM4540C, AM4541C, AM4542C, AM4543C, AM4545C

Keywords - AM4531C MOSFET specs

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