AM4531C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM4531C
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6.3 nC
trⓘ - Время нарастания: 4 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
Тип корпуса: SOIC-8
AM4531C Datasheet (PDF)
am4531c.pdf
Analog Power AM4531CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 2.5V 4.2GS30converters and power management in portable and 58 @ V = 4.5V 5.0G
am4536c.pdf
Analog Power AM4536CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8GS30converters and power management in portable and 28 @ V = 10V 7.1G
am4534c.pdf
Analog Power AM4534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.030circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0GSconver
am4530c.pdf
Analog Power AM4530CP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3GS
am4533c.pdf
Analog Power AM4533CPRODUCT SUMMARYN & P-Channel 30-V (D-S) MOSFET rDS(on) (m)VDS (V) ID(A)31 @ VGS = 4.5V6.83040 @ VGS = 2.5V6.1Key Features: 52 @ VGS = -4.5V -5.2 Low r trench technology DS(on)-3080 @ VGS = -2.5V -4.2 Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems
am4530ce.pdf
Analog Power AM4530CEP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3G
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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