All MOSFET. AM4533C Datasheet

 

AM4533C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4533C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.9 nC
   trⓘ - Rise Time: 17 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SO-8

 AM4533C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4533C Datasheet (PDF)

 ..1. Size:363K  analog power
am4533c.pdf

AM4533C
AM4533C

Analog Power AM4533CPRODUCT SUMMARYN & P-Channel 30-V (D-S) MOSFET rDS(on) (m)VDS (V) ID(A)31 @ VGS = 4.5V6.83040 @ VGS = 2.5V6.1Key Features: 52 @ VGS = -4.5V -5.2 Low r trench technology DS(on)-3080 @ VGS = -2.5V -4.2 Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems

 9.1. Size:83K  analog power
am4536c.pdf

AM4533C
AM4533C

Analog Power AM4536CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8GS30converters and power management in portable and 28 @ V = 10V 7.1G

 9.2. Size:163K  analog power
am4534c.pdf

AM4533C
AM4533C

Analog Power AM4534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.030circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0GSconver

 9.3. Size:225K  analog power
am4530c.pdf

AM4533C
AM4533C

Analog Power AM4530CP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3GS

 9.4. Size:205K  analog power
am4530ce.pdf

AM4533C
AM4533C

Analog Power AM4530CEP & N-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2GS30converters and power management in portable and 50 @ V = 10V 5.3G

 9.5. Size:221K  analog power
am4531c.pdf

AM4533C
AM4533C

Analog Power AM4531CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 2.5V 4.2GS30converters and power management in portable and 58 @ V = 4.5V 5.0G

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPD040N03L

 

 
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