AM4533C. Аналоги и основные параметры

Наименование производителя: AM4533C

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm

Тип корпуса: SO-8

Аналог (замена) для AM4533C

- подборⓘ MOSFET транзистора по параметрам

 

AM4533C даташит

 ..1. Size:363K  analog power
am4533c.pdfpdf_icon

AM4533C

Analog Power AM4533C PRODUCT SUMMARY N & P-Channel 30-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID(A) 31 @ VGS = 4.5V 6.8 30 40 @ VGS = 2.5V 6.1 Key Features 52 @ VGS = -4.5V -5.2 Low r trench technology DS(on) -30 80 @ VGS = -2.5V -4.2 Low thermal impedance Fast switching speed Typical Applications White LED boost converters Automotive Systems

 9.1. Size:83K  analog power
am4536c.pdfpdf_icon

AM4533C

Analog Power AM4536C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 42 @ V = 4.5V 5.8 GS 30 converters and power management in portable and 28 @ V = 10V 7.1 G

 9.2. Size:163K  analog power
am4534c.pdfpdf_icon

AM4533C

Analog Power AM4534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 40 @ VGS = 4.5V 6.0 30 circuitry. Typical applications are PWMDC-DC 28 @ V = 10V 7.0 GS conver

 9.3. Size:225K  analog power
am4530c.pdfpdf_icon

AM4533C

Analog Power AM4530C P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 82 @ V = 4.5V 4.2 GS 30 converters and power management in portable and 50 @ V = 10V 5.3 GS

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