AM4811P Specs and Replacement

Type Designator: AM4811P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO-8

AM4811P substitution

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AM4811P datasheet

 ..1. Size:372K  analog power
am4811p.pdf pdf_icon

AM4811P

Analog Power AM4811P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 30 @ VGS = -10V 9.5 -30 circuitry. Typical applications are PWMDC-DC 52 @ VGS = -4.5V 7.5 converte... See More ⇒

 9.1. Size:466K  ait semi
am4812.pdf pdf_icon

AM4811P

AiT Semiconductor Inc. AM4812 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM4812 is the N-Channel logic enhancement 30V / 7.8A, R = 16m (typ.)@V = 10V DS(ON) GS mode power field effect transistor which is 30V / 5.8A, R = 22m (typ.)@V = 4.5V DS(ON) GS produced using high cell density. Advanced trench Super high density cell design f... See More ⇒

Detailed specifications: AM4540C, AM4541C, AM4542C, AM4543C, AM4545C, AM4560C, AM4599C, AM45N06-16D, K3569, AM4812, AM4825P, AM4825PE, AM4830NS, AM4832N, AM4835EP, AM4835P, AM4840N

Keywords - AM4811P MOSFET specs

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